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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV27 DESCRIPTION With TO-220C package Low collector saturation voltage Fast switching speed APPLICATIONS For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage CHA IN Emitter-base voltage Base current Base current (peak) Collector-emitter voltage GE S N Open emitter Open base EMIC CONDITIONS OND TOR UC VALUE 240 120 7 12 20 4 6 UNIT V V V A A A A W ae ae Open collector Collector current (DC) Collector current (peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25ae 85 175 -65~175 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.76 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. BUV27 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH 120 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 30 V VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4 A 0.7 V VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=0.8A 1.5 V VBEsat Base-emitter saturation voltage IC=8A; IB=0.8A VCE =240V;VBE = -1.5 V TC=125ae VEB=5V; IC=0 2 V ICEX Collector cut-off current 1 mA IEBO Emitter cut-off current Switching times resistive load 1 mA ton Turn-on time ts Storage time tf Fall time HAN INC SEM GE IC=8A;IB1=0.8A;VCC=90V VBE = - 6V;RBB = 3.75| OND IC TOR UC 0.4 0.8 0.5 1.2 |I 0.12 0.25 |I ms s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV27 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 |
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